1. product profile 1.1 general description 150 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 2300 mhz to 2400 mhz. [1] 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. channel bandwidth is 3.84 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance providing excellent thermal stability ? decoupling leads to enable improved video bandwidth (70 mhz typical) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effect s providing excellent digita l pre-distortion capability ? internally matched for ease of use ? integrated esd protection ? design optimized for gull-wing ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers fo r base stations and multi carrier applications in the 2300 mhz to 2400 mhz frequency range blf8g24ls-150v; BLF8G24LS-150GV power ldmos transistor rev. 3 ? 12 may 2014 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2300 to 2400 1300 28 45 19 33 ? 30 [1]
blf8g24ls-150v_8g24ls-150gv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved. product data sheet rev. 3 ? 12 may 2014 2 of 16 nxp semiconductors blf8g24ls-150(g)v power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol blf8g24ls-150v (sot1244b) 1drain 2gate 3source [1] 4 decoupling lead 5 decoupling lead 6n.c. 7n.c. BLF8G24LS-150GV (sot1244c) 1drain 2gate 3source [1] 4 decoupling lead 5 decoupling lead 6n.c. 7n.c. d d d d d d table 3. ordering information type number package name description version blf8g24ls-150v - earless flanged ceramic package; 6 leads sot1244b BLF8G24LS-150GV - earless flanged ceramic package; 6 leads sot1244c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
blf8g24ls-150v_8g24ls-150gv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved. product data sheet rev. 3 ? 12 may 2014 3 of 16 nxp semiconductors blf8g24ls-150(g)v power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf8g24ls-150v and BLF8G24LS-150GV are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 1300 ma; p l = 150 w (cw); f = 2300 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 45 w 0.30 k/w table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.16ma65--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 216 ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds =28 v; i d = 1300 ma 1.6 2 2.4 v i dss drain leakage current v gs =0v; v ds =28v - - 4.5 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -40- a i gss gate leakage current v gs =11v; v ds = 0 v - - 450 na g fs forward transconductance v ds =10v; i d =10.8a - 16 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.56a -0.06- ? table 7. rf characteristics test signal: 2-carrier w-cdma; 3gpp test mode l 1; 64 dpch; par = 8.4 db at 0.01 % probability on the ccdf, carrier spacing 5 mhz; f 1 = 2302.5 mhz; f 2 = 2307.5 mhz; f 3 = 2392.5 mhz; f 4 = 2397.5 mhz; rf performance at v ds =28v; i dq = 1300 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) =45w 17.5 19 - db rl in input return loss p l(av) =45w - ? 10 ? 7db ? d drain efficiency p l(av) =45w 29 33 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) =45w - ? 30 ? 27 dbc
blf8g24ls-150v_8g24ls-150gv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved. product data sheet rev. 3 ? 12 may 2014 4 of 16 nxp semiconductors blf8g24ls-150(g)v power ldmos transistor 7.2 impedance information [1] z s and z l defined in figure 1 . table 8. typical impedance measured load-pull data; i dq = 1300 ma; v ds = 28 v. f z s [1] z l [1] (mhz) (? ) (? ) blf8g24ls-150v 2300 1.25 ? j4.11 2.95 ? j1.20 2400 2.34 ? j5.50 2.88 ? j1.31 2500 5.65 ? j6.35 2.80 ? j1.35 BLF8G24LS-150GV 2300 1.29 ? j5.78 3.13 ? j3.26 2400 2.15 ? j7.09 2.78 ? j3.44 2500 6.61 ? j7.57 2.98 ? j3.66 fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h
blf8g24ls-150v_8g24ls-150gv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved. product data sheet rev. 3 ? 12 may 2014 5 of 16 nxp semiconductors blf8g24ls-150(g)v power ldmos transistor 7.3 vbw in a class-ab operation the blf8g24ls-150v shows 70 mhz (typic al) video bandwidth (imd third-order intermodulation inflection point) in a class-ab test circuit in the 2.3 ghz to 2.4 ghz band at v ds = 28 v and i dq =1.3a. 7.4 test circuit v ds = 28 v; i dq = 1300 ma; f c = 2350 mhz. (1) low (2) high fig 2. vbw capacity in class-ab test circuit d d d f d u u l h u v s d f l q j 0 + ] , 0 ' , 0 ' , 0 ' g % f g % f g % f , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' printed-circuit board (pcb): rogers 4350b with a thickness of 0.76 mm. see ta b l e 9 for a list of components. fig 3. component layout d d d p p p p p p & |